The Features of Electronic Conduction in InAs
The electrical properties of n-type crystals of InAs compound, grown from stoichiometric melt by the horizontal zone melting method, have been investigated in the temperature range of 4.2 K-300 K before and after fast neutron irradiation up to high integral fluences of 2×1018n?cm-2. At a fixed temperature electrons concentration (n) increases almost by one order during irradiation, and practically does not change with increasing of temperature. n increases only slightly by increasing of temperature near 300 K, both before and after irradiation. When ? 4×1018cm-3 the change of during irradiation is negligible. Comparison of experimental data of mobility with theory shows that the privileged scattering mechanism of electrons at 300 K is scattering on optical phonons in InAs with 1016-1017 cm-3 and scattering on ions of impurity in InAs with n~1018-1019 cm-3. The analysis shows that during irradiation point type scattering centers of donor-type structural defects with shallow levels in the forbidden zone appear. Consequently, the mobility decreases during irradiation. At 300 K in sample with electrons concentration of 3×1016 cm-3 the mobility decreases by 5 times after irradiation, which is equivalent to the formation of 1.5×1019cm-3 charged point scattering centers.
L. W. Aukerman, Electron Irradiation of Indium Arsenide, Phys. Rev. 115(5), pp.1133–1135, 1959.
N. Kekelidze, G. Kekelidze. Electrical and optical properties of InP and InAs compounds and their solid solutions irradiated with fast neutrons and - Radiation defects in semiconductors. Institute of Physics, conference. ser.16. p. 387, Bristol, London, 1973.
N. Kekelidze, G. Kekelidze. Radiation Effects in Indium Arsenide Compounds and their Solid Solutions. Radiation Effects in Semiconductors. Inst. Phys. Conf. Ser.31, Bristol, London, 1976.
L.W. Aukerman, Radiation Effects, in Semiconductors and Semimetals, Edited by R. K. Willardson, Albert C. Beer, Physics of 111-V Compounds, Chapter 6, Academic Press, New York and London, 1968, Vol.4, pp.343-409.
Bolshakova, I. Vasilevskii, L. Viererbl, I. Duran, N. Kovalyova, K. Kovarik, Ya.Kost, O. Makido, J. Sentkerestiova, A. Shtabalyuk, F. Shurygin. Prospects of using In-containing semiconductor materials in magnetic field sensors for thermonuclear reactor magnetic diagnostics //IEEE Transactions on Magnetics. – Volume 49, Issue 1, pp.50-53, 2013.
H. Ehrenreich, Electron mobility of indium arsenide phosphide [In(AsyP1−y)],J. Phys. Chem.Solids,12, pp.97-104, 1959.
C. M. Wolfe, N. Holonyak, Jr., and G. S. Stillman, Physical Properties of Semiconductors. Englewood Cliffs, N. J.: Prentice Hall, 1989.
R. Mansfield, Impurity scattering, Proc. Phys. Soc. B.69, pp.76-82, 1956.
F.J. Blatt, Theory of Mobility of Electrons in Solids, Solid State Physics, Academic Press Inc., New York, 4, pp. 199-366, 1957.
H. Brooks, Advances in Electronics and Electron Physics.7, Academic Press, New York, p.177, 1955.
D. L. Rode, Electron Mobility in Direct-gap Polar Semiconductors, Phys. Rev. B2, pp.1012-1023, 1970.
D. L. Rode, Electron Transport in InSb, InAs, and InP, Phys. Rev., B3, pp.3287-3299, 1971.