The Features of Electronic Conduction in InAs


  •   E. Khutsishvilii

  •   Z. Chubinishvili

  •   G. Kekelidze

  •   I. Kalandadze

  •   T. Qamushadze

  •   M. Metskhvarishvili


The electrical properties of n-type crystals of InAs compound, grown from stoichiometric melt by the horizontal zone melting method, have been investigated in the temperature range of 4.2 K-300 K before and after fast neutron irradiation up to high integral fluences of 2×1018n?cm-2. At a fixed temperature electrons concentration (n) increases almost by one order during irradiation, and practically does not change with increasing of temperature. n increases only slightly by increasing of temperature near 300 K, both before and after irradiation. When  ? 4×1018cm-3 the change of  during irradiation is negligible. Comparison of experimental data of mobility with theory shows that the privileged scattering mechanism of electrons at 300 K is scattering on optical phonons in InAs with  1016-1017 cm-3 and scattering on ions of impurity in InAs with n~1018-1019 cm-3. The analysis shows that during irradiation point type scattering centers of donor-type structural defects with shallow levels in the forbidden zone appear. Consequently, the mobility decreases during irradiation. At 300 K in  sample with electrons concentration of 3×1016 cm-3 the mobility decreases by 5 times after irradiation, which is equivalent to the formation of 1.5×1019cm-3 charged point scattering centers.

Keywords: semiconductor, current carriers, radiation, point type scattering centers


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How to Cite
Khutsishvilii, E., Chubinishvili, Z., Kekelidze, G., Kalandadze, I., Qamushadze, T. and Metskhvarishvili, M. 2021. The Features of Electronic Conduction in InAs. European Journal of Engineering and Technology Research. 6, 3 (Apr. 2021), 75–78. DOI: